1 electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit dark current i ceo v ce = 10v 5 300 na collector photo current i ce(l) v ce = 10v, l = 100 lx *1 1.5 3.5 ma peak sensitivity wavelength p v ce = 10v 800 nm acceptance half angle measured from the optical axis to the half power point 10 deg. response time t r , t f *2 v cc = 10v, i ce(l) = 5ma, r l = 100 ? 3 s collector saturation voltage v ce(sat) i ce(l) = 1ma, l = 500 lx *1 0.2 0.4 v *1 measurements were made using a tungsten lamp (color temperature t = 2856k) as a light source. *2 switching time measurement circuit features high sensitivity wide spectral sensitivity, suited for detecting gaas leds low dark current : i ceo = 5 na (typ.) fast response : t r , t f = 3 s (typ.) to-18 standard type package pna1401l (PN101) silicon npn phototransistor for optical control systems phototransistors absolute maximum ratings (ta = 25?c) parameter symbol ratings unit collector to emitter voltage v ceo 30 v emitter to collector voltage v eco 5v collector current i c 50 ma collector power dissipation p c 150 mw operating ambient temperature t opr C25 to +85 ?c storage temperature t stg C30 to +100 ?c glass lens 6.3 0.3 1: emitter 2: collector unit : mm 1.0 0.2 1.0 0.15 ?4.6 0.15 2.54 0.25 ?5.75 max. 2-?0.45 0.05 12.7 min. 45 3? 1 2 &
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? r l t d : delay time t r : rise time (time required for the collector photo current to increase from 10% to 90% of its final value) t f : fall time (time required for the collector photo current to decrease from 90% to 10% of its initial value) v cc sig.out 10% 90% sig.in t d t r t f note) the part number in the parenthesis shows conventional part number.
2 pna1401l phototransistors i ce(l) v ce 20 16 12 4 8 0 collector to emitter voltage v ce (v) ta = 25?c collector photo current i ce(l) (ma) 020 10 30 i ce(l) l 10 2 10 1 10 C1 illuminance l (lx) collector photo current i ce(l) (ma) 10 10 2 10 3 10 C2 1 v ce = 10v ta = 25?c i ceo ta 10 3 10 1 10 2 ambient temperature ta (?c ) v ce = 10v dark current i ceo (na) 10 C1 C 40 0 40 80 120 i ce(l) ta 10 2 10 ambient temperature ta (?c ) v ce = 10v t = 2856k collector photo current i ce(l) (ma) 1 C 40 0 40 80 120 spectral sensitivity characteristics 100 80 60 40 20 wavelength (nm) relative sensitivity s (%) 400 600 800 1000 1200 0 200 ta = 25?c directivity characteristics 100 80 60 40 20 0 30 20 10 0 10 20 30 angle (deg.) relative sensitivity s (%) t r i ce(l) 10 3 10 2 10 1 collector photo current i ce(l) (ma) rise time t r ( s) 11010 2 10 C1 10 C1 v cc = 10v ta = 25?c p c ta 200 160 120 80 40 ambient temperature ta (?c ) collector power dissipation p c (mw) 0 20406080100 0 C 20 p c = 150mw l = 50 lx 100 lx 150 lx 200 lx 300 lx 400 lx 500 lx 1000 lx l = 500 lx 200 lx 100 lx r l = 1k ? 500 ? 100 ?
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